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CKD Technology not only has brand new machines in stock, available immediately.
We also have detailed renting business, ready to serve your specific production requirement while significantly lowering your initial investment. Contact us for more details.
CKD has a team of professional engineers, ready to deliver turn key service.
For trading of used machines, please contact us via Whatspp or email.
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The MYS10SD is a fully automated, in-line plasma processing system developed for applications in sectors such as Mini LED, electronics, SMT, optoelectronics, and medical technology.
• Atmospheric-pressure argon wide-area plasma system
• 100mm-wide in-line batch plasma processing; offers 2–5 times higher efficiency and over 30% lower operating costs compared to traditional methods
• Product surface temperature remains below 45°C during processing
• Instant startup with no warm-up time required, saving production time
• Capable of processing a wide range of products; supports flexible switching between plasma heads of various sizes
• Highly flexible, compatible, and cost-effective plasma platform
• Capable of targeted cleaning on specific product areas
| Basic Specifications | MYS10SD |
| Power Requirements | AC 200~240V, 3.2kW, 15A, 50Hz |
| Air Pressure Requirements | 90psi (6bar) |
| Dimensions | 990*1300*1800mm |
| Weight | 680kg |
| Certification Standards | CE |
| Positioning Accuracy | XYZ: ±50µm @ 3σ |
| XYZ-Axis Repeatability | XYZ: ±25µm @ 3σ |
| Maximum Speed | 600mm/s (XY) |
| Acceleration | 0.6g |
| Drive System | AC servo |
| Work Platform Specifications | |
| Conveyor Type | Belt |
| Conveyor Load Capacity | 3kg |
| Substrate Thickness Range (without carrier) | |
| 0.5–10 mm | |
| Z-axis travel | 60 mm |
| Max. component height (top side) | 100 mm |
| Max. component height (bottom side) | 100 mm |
| Communication protocol | SMEMA |
| Working range | |
| Plasma treatment area (W × D) | 475–480 mm |
| Post-treatment contact angle (WCA) |
WCA < 10° (Silicon wafer) WCA < 20° (Non-metallic) |
| Plasma treatment method | Ar+O2 process for organic contaminant removal |
| Plasma system requirements | |
| RF power | 250 W at 13.56 MHz |
| Main plasma gas | Argon |
| Process gas | O2 |
| Gas supply pressure range | 40–120 psi (0.3–0.8 MPa) |
Address
5th Floor, Building 2, No. 182, Chang'an Xi'an Road, Chang'an Town, Dongguan, Guangdong Province, China.
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