English
CKD Technology not only has brand new machines in stock, available immediately.
We also have detailed renting business, ready to serve your specific production requirement while significantly lowering your initial investment. Contact us for more details.
CKD has a team of professional engineers, ready to deliver turn key service.
For trading of used machines, please contact us via Whatspp or email.
-------------------------------------------------------------------------------------
The MYS10 series is a fully automated, in-line plasma processing system developed for applications in sectors such as semiconductors, electronics, SMT, optoelectronics, and medical technology.
• Atmospheric-pressure argon plasma system
• 100mm-wide in-line batch plasma processing; offers 2–5 times higher efficiency and over 30% lower operating costs compared to traditional methods
• 100% neutral plasma; safe and gentle on sensitive electronic components—generates no plasma bombardment, static electricity, sparks, arcs, dust, high heat, surface ripples, or UV radiation, ensuring zero damage to products
• Compact plasma platform offering high flexibility and compatibility
• Versatile chemical processes: O2 process for removing organic contaminants; H2 process for removing metal oxides and activating product surfaces
• No generation of particulate or liquid contaminants
| Basic Specifications | MYS10 |
| Power Requirements | AC 200–240V, 4.4kW, 20A, 50/60Hz |
| Air Pressure Requirements | 90 psi (6 bar) |
| Dimensions | 790 x 1200 x 1880 mm |
| Weight | 800 kg |
| Certification Standards | CE, SEMI S2 |
| Positioning Accuracy | XY: ±30 µm @ 3σ; Z: ±10 µm @ 3σ |
| XYZ Axis Repeatability | XY: ±15 µm @ 3σ; Z: ±5 µm @ 3σ |
| Maximum Speed | 1000 mm/s (XY) |
| Acceleration | 1.0g |
| Drive System | AC servo |
| Work Platform Specifications | |
| Track Type | Belt |
| Rail load capacity | 3 kg |
| Substrate thickness range (without carrier) | 0.5–6 mm |
| Z-axis travel | 100 mm |
| Max. component height (top side) | 26 mm |
| Max. component height (bottom side) | 23 mm |
| Communication protocol | SMEMA |
| Working range | |
| Plasma treatment area (W×D) | 350–475 mm |
| Water Contact Angle (WCA) after plasma treatment |
WCA < 10° (Silicon wafer) WCA < 20° (Non-metallic) |
| Plasma treatment method |
O2 process for organic contaminant removal H2 process for metal oxide removal |
| Plasma system requirements | |
| RF Power | 600W at 27.12MHz |
| Main Plasma Gas | Argon |
| Process Gas | O2, N2, or H2 |
| Gas Supply Pressure Range | 40–100 psi (0.3–0.7 MPa) |
Address
5th Floor, Building 2, No. 182, Chang'an Xi'an Road, Chang'an Town, Dongguan, Guangdong Province, China.
Tel
