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CKD Technology not only has brand new machines in stock, available immediately.
We also have detailed renting business, ready to serve your specific production requirement while significantly lowering your initial investment. Contact us for more details.
CKD has a team of professional engineers, ready to deliver turn key service.
For trading of used machines, please contact us via Whatspp or email.
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The MYS10iL series is a fully automated, in-line plasma processing system developed for applications across various sectors, including semiconductors, electronics, SMT, optoelectronics, and medical technology.
• Atmospheric-pressure argon plasma system
• 100mm-wide inline batch plasma processing; offers 2–5 times higher efficiency and over 30% lower operating costs compared to traditional methods
• 100% neutral plasma; safe and gentle on sensitive electronic components—no plasma bombardment, static electricity, sparks, arcs, dust, high temperatures, surface ripples, or UV radiation
• Versatile chemical processes: O2 process for removing organic contaminants; H2 process for removing metal oxides and activating product surfaces
• Generates no particulate or liquid contamination on the product
| Basic Parameters | MYS10iL |
| Power Requirements | AC 200~240V, 4.5kW, 20A, 50/60Hz |
| Air Pressure Requirements | 90psi (6bar) |
| Dimensions | 1000 x 1500 x 1550mm |
| Weight | 1050kg |
| Certification | CE |
| Positioning Accuracy | XY: ±50µm @ 3σ; Z: ±10µm @ 3σ |
| XYZ-Axis Repeatability | XY: ±25µm @ 3σ; Z: ±5µm @ 3σ |
| Maximum Speed | 1000mm/s (XY) |
| Acceleration | 1.0g |
| Drive System | AC servo |
| Work Platform Parameters | |
| Conveyor Type | Belt |
| Conveyor Load Capacity | 3kg |
| PCB Thickness Range (without carrier) | 0.5–6mm |
| Z-Axis Travel | 60mm |
| Max. Component Height (Top Side) | 45mm |
| Max. Component Height (Bottom Side) | 23mm |
| Communication Protocol | SMEMA |
| Working Range | |
| Plasma Treatment Area (W×D) | 550–760mm |
| Water Contact Angle (WCA) after plasma treatment |
WCA < 10° (Silicon wafer) WCA < 20° (Non-metallic materials) |
| Plasma treatment method |
O2 process for organic contaminant removal H2 process for metal oxide removal |
| Plasma system equipment requirements | |
| RF power | 600W at 27.12MHz |
| Main plasma gas | Argon |
| Process gas | O2, N2, or H2 |
| Gas supply pressure range | 40–100 psi (0.3–0.7 MPa) |
Address
5th Floor, Building 2, No. 182, Chang'an Xi'an Road, Chang'an Town, Dongguan, Guangdong Province, China.
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