CKD Technology not only has brand new machines in stock, available immediately.
We also have detailed renting business, ready to serve your specific production requirement while significantly lowering your initial investment. Contact us for more details.
CKD has a team of professional engineers, ready to deliver turn key service.
For trading of used machines, please contact us via Whatspp or email.
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The MYW10 plasma system delivers a highly flexible, high-throughput wafer surface treatment process.
• Atmospheric-pressure argon plasma system
• 100mm-wide inline plasma batch processing; offers 2–5 times higher efficiency and over 30% lower operating costs compared to traditional methods
• 100% neutral plasma; safe and gentle on sensitive electronic components—no plasma bombardment, static electricity, sparks, arcing, dust, high heat, surface ripples, or UV radiation, ensuring zero damage to the product
• Versatile chemical processes: O2 process for removing organic contaminants; H2 process for removing metal oxides and activating product surfaces
• Causes no particle contamination or changes in surface roughness on the wafer
• Compatible with both wafer and tape frame production, allowing for rapid switching between the two
• Meets Class 10 cleanroom and SEMI standards
| Basic Parameters | MYW10 |
| Power Requirements | AC 380V, 13kW, 20A, 50/60Hz |
| Air Pressure Requirements | 90psi (6bar) |
| Dimensions | 2000 x 2800 x 2200 mm |
| Weight | 2200 kg |
| Certification Standards | SEMI S2/S6/S8 |
| Positioning Accuracy | XY: ±20 µm @ 3σ; Z: ±10 µm @ 3σ |
| XYZ-Axis Repeatability | XY: ±10 µm @ 3σ; Z: ±5 µm @ 3σ |
| Maximum Speed | 1000 mm/s (XY) |
| Acceleration | 1.0g |
| Drive System | AC servo |
| Work Platform Specifications | |
| Loading/Unloading Method | OHT + Load Port + Robotic Arm |
| Robotic Arm Payload | 3 kg |
| Compatible Wafer Size | 12-inch (300 mm) |
| Software Operating System | Windows 10 |
| X/Y Travel | 400 mm / 500 mm |
| Z-Axis Travel | 20mm |
| Communication Protocol | SECS/GEM |
| Operating Range | |
| Plasma Treatment Area (W×D) | 300×300mm |
| Post-treatment Water Contact Angle (WCA) | WCA < 10° (Silicon wafer) |
| Plasma Treatment Method |
O2 process for organic contaminant removal H2 process for metal oxide removal |
| Plasma System Requirements | |
| RF Power | 600W at 27.12MHz |
| Main Plasma Gas | Argon |
| Process Gas | O2, N2, or H2 |
| Gas Supply Pressure Range | 40–100 psi (0.3–0.7 MPa) |
Address
5th Floor, Building 2, No. 182, Chang'an Xi'an Road, Chang'an Town, Dongguan, Guangdong Province, China.
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